Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction.
Identifieur interne : 000A34 ( Main/Exploration ); précédent : 000A33; suivant : 000A35Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction.
Auteurs : RBID : pubmed:22142358English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Antimony, Indium.
- chemistry : Nanostructures.
- ultrastructure : Nanostructures.
- Electric Conductivity, Equipment Design, Equipment Failure Analysis, Particle Size, Semiconductors.
Abstract
Epitaxially grown, high quality semiconductor InSb nanowires are emerging material systems for the development of high performance nanoelectronics and quantum information processing and communication devices and for the studies of new physical phenomena in solid state systems. Here, we report on measurements of a superconductor-normal conductor-superconductor junction device fabricated from an InSb nanowire with aluminum-based superconducting contacts. The measurements show a proximity-induced supercurrent flowing through the InSb nanowire segment with a critical current tunable by a gate in the current bias configuration and multiple Andreev reflection characteristics in the voltage bias configuration. The temperature dependence and the magnetic field dependence of the critical current and the multiple Andreev reflection characteristics of the junction are also studied. Furthermore, we extract the excess current from the measurements and study its temperature and magnetic field dependences. The successful observation of the superconductivity in the InSb nanowire-based Josephson junction device indicates that InSb nanowires provide an excellent material system for creating and observing novel physical phenomena such as Majorana fermions in solid-state systems.
DOI: 10.1021/nl203380w
PubMed: 22142358
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Box 118, S-221 00 Lund</wicri:regionArea></affiliation></author><author><name sortKey="Samuelsson, P" uniqKey="Samuelsson P">P Samuelsson</name></author><author><name sortKey="Caroff, P" uniqKey="Caroff P">P Caroff</name></author><author><name sortKey="Xu, H Q" uniqKey="Xu H">H Q Xu</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1021/nl203380w</idno><idno type="RBID">pubmed:22142358</idno><idno type="pmid">22142358</idno><idno type="wicri:Area/Main/Corpus">001029</idno><idno type="wicri:Area/Main/Curation">001029</idno><idno type="wicri:Area/Main/Exploration">000A34</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony (chemistry)</term><term>Electric Conductivity</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Indium (chemistry)</term><term>Nanostructures (chemistry)</term><term>Nanostructures (ultrastructure)</term><term>Particle Size</term><term>Semiconductors</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Antimony</term><term>Indium</term></keywords><keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanostructures</term></keywords><keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanostructures</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Electric Conductivity</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Particle Size</term><term>Semiconductors</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Epitaxially grown, high quality semiconductor InSb nanowires are emerging material systems for the development of high performance nanoelectronics and quantum information processing and communication devices and for the studies of new physical phenomena in solid state systems. Here, we report on measurements of a superconductor-normal conductor-superconductor junction device fabricated from an InSb nanowire with aluminum-based superconducting contacts. The measurements show a proximity-induced supercurrent flowing through the InSb nanowire segment with a critical current tunable by a gate in the current bias configuration and multiple Andreev reflection characteristics in the voltage bias configuration. The temperature dependence and the magnetic field dependence of the critical current and the multiple Andreev reflection characteristics of the junction are also studied. Furthermore, we extract the excess current from the measurements and study its temperature and magnetic field dependences. The successful observation of the superconductivity in the InSb nanowire-based Josephson junction device indicates that InSb nanowires provide an excellent material system for creating and observing novel physical phenomena such as Majorana fermions in solid-state systems.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22142358</PMID><DateCreated><Year>2012</Year><Month>01</Month><Day>11</Day></DateCreated><DateCompleted><Year>2012</Year><Month>04</Month><Day>27</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1530-6992</ISSN><JournalIssue CitedMedium="Internet"><Volume>12</Volume><Issue>1</Issue><PubDate><Year>2012</Year><Month>Jan</Month><Day>11</Day></PubDate></JournalIssue><Title>Nano letters</Title><ISOAbbreviation>Nano Lett.</ISOAbbreviation></Journal><ArticleTitle>Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction.</ArticleTitle><Pagination><MedlinePgn>228-33</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/nl203380w</ELocationID><Abstract><AbstractText>Epitaxially grown, high quality semiconductor InSb nanowires are emerging material systems for the development of high performance nanoelectronics and quantum information processing and communication devices and for the studies of new physical phenomena in solid state systems. Here, we report on measurements of a superconductor-normal conductor-superconductor junction device fabricated from an InSb nanowire with aluminum-based superconducting contacts. The measurements show a proximity-induced supercurrent flowing through the InSb nanowire segment with a critical current tunable by a gate in the current bias configuration and multiple Andreev reflection characteristics in the voltage bias configuration. The temperature dependence and the magnetic field dependence of the critical current and the multiple Andreev reflection characteristics of the junction are also studied. Furthermore, we extract the excess current from the measurements and study its temperature and magnetic field dependences. The successful observation of the superconductivity in the InSb nanowire-based Josephson junction device indicates that InSb nanowires provide an excellent material system for creating and observing novel physical phenomena such as Majorana fermions in solid-state systems.</AbstractText><CopyrightInformation>© 2011 American Chemical Society</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Nilsson</LastName><ForeName>H A</ForeName><Initials>HA</Initials><Affiliation>Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden.</Affiliation></Author><Author ValidYN="Y"><LastName>Samuelsson</LastName><ForeName>P</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Caroff</LastName><ForeName>P</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Xu</LastName><ForeName>H Q</ForeName><Initials>HQ</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2011</Year><Month>12</Month><Day>13</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Nano Lett</MedlineTA><NlmUniqueID>101088070</NlmUniqueID><ISSNLinking>1530-6984</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>9IT35J3UV3</RegistryNumber><NameOfSubstance>Antimony</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Antimony</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electric Conductivity</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanostructures</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="N">ultrastructure</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Particle Size</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2011</Year><Month>12</Month><Day>13</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>12</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>12</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>4</Month><Day>28</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/nl203380w</ArticleId><ArticleId IdType="pubmed">22142358</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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